参数资料
型号: 2SD2592S
元件分类: 功率晶体管
英文描述: POWER TRANSISTOR
封装: DPAK-3
文件页数: 2/4页
文件大小: 27K
代理商: 2SD2592S
2SD2592L, 2SD2592S
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to Base voltage
V
CBO
300
V
Collector to Emitter voltage
V
CEO
300
V
Emitter to Base voltage
V
EBO
5V
Collector current
I
C
0.15
A
Collector peak current
I
C(peak)
0.6
A
Collector power dissipation
Pc
Note1
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
300
V
I
C = 1mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
V
I
E = 10mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 300V, IE = 0
Emitter cutoff current
I
EBO
——
10
AV
EB = 4V, IC = 0
DC current transfer ratio
h
FE1
60
200
V
CE = 1.5V, IC = 20mA
DC current transfer ratio
h
FE2
60
V
CE = 5V, IC = 100mA
Collector to emitter saturation
voltage
V
CE(sat)
1.0
I
C = 100mA, IB = 5mA
Base to emitter saturation
voltage
V
BE(sat)
1.5
I
C = 100mA, IB = 5mA
Gain bandwidth product
f
T
16
MHz
V
CE = 1.5A, IC = 20mA
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