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参数资料
| 型号： | 2SD2672TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TSMT3, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 89K |
| 代理商： | 2SD2672TL |
2SD2672
Transistors
Rev.C
2/2
Electrical characteristic curves
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
1000
100
Ta
=125°C
Ta
=40°C
Ta
=25°C
VCE
=2V
Pulsed
COLLECTOR CURRENT : IC (A)
BASE
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.001
1
0.1
0.001
0.01
0.1
10
1
Ta
=25°C
Ta
=40°C
Ta
=125°C
IC/IB
=20
Pulsed
IC/IB
=20/1
Pulsed
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
10
0.01
0.1
1
IC/IB
=20/1
Pulsed
Ta
=25°C
Ta
=40°C
Ta
=125°C
BASE TO EMITTER CURRENT : VBE (V)
COLLECTOR
CURRENT
:
I
C
(A)
Fig.4 Grounded emitter propagation
characteristics
01
2
0.001
0.01
1
10
0.1
VBE
=2V
Pulsed
Ta
=125°C
Ta
=25°C
Ta
=40°C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF
)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
110
100
0.001
0.1
0.01
1
10
100
1000
f
=1MHz
IC
=0A
Ta
=25
°C
Cib
Cob
EMITTER CURRENT : IE (A)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.6 Gain bandwidth product
vs. emitter current
0.01
0.1
1
10
1000
100
Ta
=25°C
VCE
=2V
f
=100MHz
COLLECTOR CURRENT : IC (A)
Fig.7 Switching time
0.01
1
0.1
10
1
10
10000
1000
100
Ta
=25°C
VCE
=5V
f
=100MHz
tstg
tdon
tr
tf
SWITCHING
TIME
:
(ns)
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相关代理商/技术参数 |
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