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参数资料
| 型号： | 2SD668AB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 32K |
| 代理商： | 2SD668AB |
2SD668, 2SD668A
2
Electrical Characteristics (Ta = 25°C)
2SD668
2SD668A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
180
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
160
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
——10
A
V
CB = 160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
—
320
60
—
200
V
CE = 5 V, IC = 10 mA
h
FE2
30
—
30
—
V
CE = 5 V, IC = 1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——
2
——2
V
I
C = 30 mA, IB = 3 mA
Base to emitter voltage V
BE
—
1.5
—
1.5
V
CE = 5 V, IC = 10 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = 10 V, IC = 10 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SD668 and 2SD668A are grouped by h
FE1 as follows.
BCD
2SD668
60 to 120
100 to 200
160 to 320
2SD668A
60 to 120
100 to 200
—
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD668B | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668 | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668D | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD669A-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669A-C-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD668AC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD669 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
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