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参数资料
| 型号： | 2SH26 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 191K |
| 代理商： | 2SH26 |
2SH26
3
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Collector to Emitter Voltage V
(V)
CE
Collector
Current
I
(A)
C
Maximum Safe Operation Area
Typical Output Characteristics
Reverse Bias SOA
Collector to Emitter Voltage V
(V)
CE
Collector
Current
I
(A)
C
Collector to Emitter Voltage V
(V)
CE
Collector
Current
I
(A)
80
60
40
20
0
50
100
150
200
100
30
10
1
3
10
30
100
3
1
0.3
0.1
0.03
0.01
300
1000
100
s
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
Ta = 25
°C
20
16
12
8
4
0
2
468
10
0
200
400
600
800
20
5
10
2
0.5
1
0.2
0.1
V
= 10 V
GS
C
12 V
11 V
14 V
Pulse Test
15 V
50
13 V
Tc = 25
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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