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参数资料
| 型号： | 2SH26 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 191K |
| 代理商： | 2SH26 |
2SH26
4
Gate to Emitter Voltage
V
(V)
GE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
V
(V)
CE(sat)
Collector
to
Emitter
Saturation
Voltage
Collecot to Emitter Saturation Voltage
vs. Collector Current
Gate to Emitter Voltage
V
(V)
GE
Collector
Current
I
(A)
C
Typical Transfer Characteristics
Capacitance
C
(pF)
Collector to Emitter Voltage V
(V)
CE
Typical Capacitance vs.
Collecotor to Emitter Voltage
Collector Current
I
(A)
C
5
4
3
2
1
0
48
12
16
20
16
12
8
4
0
4
8
12
16
20
Tc = 75°C
25°C
–25°C
5 A
I
= 10 A
C
V
= 10 V
Pulse Test
CE
Pulse Test
0.1
1
10
100
0.3
3
30
2
1
0.5
0.2
0.1
010
20
30
40
50
10000
300
1000
100
30
10
5
3
10
V
= 0
f = 1 MHz
GE
Cies
Coes
Cres
1
3000
V
(V)
CE(sat)
Collector
to
Emitter
Saturation
Voltage
–25°C
Tc = 75°C
25°C
V
= 15 V
Pulse Test
GE
2.5 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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