- 您现在的位置：买卖IC网 > PDF目录41530 > 2SH26 10 A, 600 V, N-CHANNEL IGBT, TO-220AB PDF资料下载
参数资料
| 型号： | 2SH26 |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 12/12页 |
| 文件大小： | 191K |
| 代理商： | 2SH26 |
2SH26
5
Gate Charge
Qg (nc)
Collector
to
Emitter
Voltage
V
(V)
CE
Gate
to
Emitter
Voltage
V
(V)
GE
Dynamic Input Characteristics
Collector Current
I
(A)
C
Switching
Time
t
(ns)
Switching Characteristics
Gate Resistance Rg (
)
Switching
Time
t
(ns)
Switching Characteristics
Case Temperature Tc (°C)
Switching
Time
t
(ns)
Switching Characteristics
500
400
300
200
100
0
20
16
12
8
4
20
40
60
80
100
0
1000
200
500
100
20
10
50
1
2
10
20
V
= 200 V
300 V
400 V
CC
V
= 400 V
300 V
200 V
CC
I = 10 A
C
VCE
VGE
5
t f
r
t
d(on)
t
d(off)
t
V
= 300V, V
= ±15 V
Rg = 50
, Ta = 25°C
CC
GE
1000
100
300
30
3
1
10
1000
200
500
100
20
10
50
25
50
75
100
125
1
3
10
30
100
300
1000
t f
r
t
d(on)
t
d(off)
t
GE
I
= 10A, R = 30
V
= ±15 V
C
L
t f
r
t
d(on)
t
d(off)
t
GE
I
= 10A, R = 30
V
= ±15 V, Rg = 50
C
L
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ130S | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ130L | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ144GRTE85L | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ144BLTE85R | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ144TE85L | P-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
发布紧急采购，3分钟左右您将得到回复。