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参数资料
| 型号： | 2SJ186 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 57K |
| 代理商： | 2SJ186 |
2SJ186
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–200
V
Gate to source voltage
V
GSS
±15
V
Drain current
I
D
–0.5
A
Drain peak current
I
D(pulse)*
1
–1.0
A
Body to drain diode reverse drain current
I
DR
–0.5
A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5
×20×0.7 mm)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
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