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参数资料
| 型号： | 2SJ186 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 7/11页 |
| 文件大小： | 57K |
| 代理商： | 2SJ186 |
2SJ186
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±15
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±12 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–50
AV
DS = –160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
—
–4.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—
8.0
12.0
I
D = –0.25 A, VGS = –10 V*
1
resistance
—
10.0
15.0
I
D = –1 A, VGS = –10 V*
1
Forward transfer admittance
|y
fs|
0.18
0.3
—
S
I
D = –0.25 A, VDS = –10 V*
1
Input capacitance
Ciss
—
75
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
32
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
5
—
pF
Turn-on delay time
t
d(on)
—6
—ns
I
D = –0.25 A, VGS = –10 V,
Rise time
t
r
—6
—ns
R
L = 120
Turn-off delay time
t
d(off)
—17
—
ns
Fall time
t
f
—15
—
ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = –0.5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = –0.5 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
Marking for 2SJ186 is “CY”.
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PDF描述 |
|---|---|
| 2SJ186 | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2SJ195TP-FA | 4 A, 100 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ315 | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
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