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参数资料
| 型号： | 2SJ186 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | UPAK-3 |
| 文件页数： | 8/11页 |
| 文件大小： | 57K |
| 代理商： | 2SJ186 |
2SJ186
4
1.2
0.8
0.4
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
–10
–100
–1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–1
–0.1
–0.01
–0.001
Ta = 25°C
10
s
100
s
1 ms
DC
Operation
(T
C = 25°C)
PW
=
10
ms
(1
Shot)
Operation
in
this
Area
is
Limited
by
R
DS
(on)
–1.0
–20
–50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
–0.8
–0.2
–10
–30
–40
0
–0.4
–0.6
Drain
Current
I
D
(A)
Pulse Test
VGS = –4 V
–5 V
–6 V
–8 V
–10 V
–1.0
–4
–10
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–0.8
–0.2
–2
–6
–8
0
–0.4
–0.6
VDS = –20 V
Pulse Test
TC = 75°C
25°C
–25°C
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PDF描述 |
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| 2SJ315 | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ186CY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ186CYEL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ186CYTL | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ187 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ187TD | 制造商:DC 功能描述:* |
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