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参数资料
| 型号： | 2SJ200-O |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16C1B, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 245K |
| 代理商： | 2SJ200-O |
2SJ200
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Complementary to 2SK1529
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
10
A
Drain power dissipation (Tc = 25°C)
PD
120
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain cutoff current
IDSS
VDS = 180 V, VGS = 0
―
1.0
mA
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
―
±0.5
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
―
V
Gatesource cutoff voltage
(Note 2)
VGS (OFF)
VDS = 10 V, ID = 0.1 A
0.8
―
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 6 A, VGS = 10 V
―
1.5
5.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
―
4.0
―
S
Input capacitance
Ciss
VDS = 30 V, VGS = 0, f = 1 MHz
―
1300
―
Output capacitance
Coss
VDS = 30 V, VGS = 0, f = 1 MHz
―
350
―
Reverse transfer capacitance
Crss
VDS = 30 V, VGS = 0, f = 1 MHz
―
200
―
pF
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification
O: 0.8~1.6,
Y: 1.4~2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相关代理商/技术参数 |
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| 2SJ200Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 10A I(D) | TO-247VAR |
| 2SJ200-Y | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 180V 10A 3PIN TO-3P(N) - Rail/Tube |
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| 2SJ201_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
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