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参数资料
| 型号： | 2SJ204 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIMOLD, SC-59, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 214K |
| 代理商： | 2SJ204 |
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1991
MOS FIELD EFFECT TRANSISTOR
2SJ204
P-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17904EJ3V0DS00 (3rd edition)
(Previous No. TC-2326)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
The 2SJ204, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ204 has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors,
relays, and solenoids.
FEATURES
Directly driven by ICs having a 5 V power supply.
Has low on-state resistance
RDS(on) = 13
MAX. (VGS = 4.0 V, ID = 10 mA)
RDS(on) = 8
MAX. (VGS = 10 V, ID = 10 mA)
Complementary to 2SK1582
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ204
SC-59 (Mini Mold)
Marking: H15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
ID(DC)
m200
mA
Drain Current (pulse)
Note
ID(pulse)
m400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1
2
3
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ205 | 0.5 A, 16 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ221-E | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ230 | 2.5 A, 60 V, 0.27 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ243 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ244TR | SMALL SIGNAL, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ204-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ204-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ205 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Fied Effect Transistor |
| 2SJ205-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ205-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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