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参数资料
| 型号： | 2SJ204 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIMOLD, SC-59, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 214K |
| 代理商： | 2SJ204 |
2SK4084LS
No. A0552-4/5
PW
<10s
Operation in this area
is limited by RDS(on).
10
s
100
s
1ms
10ms
IDP=50A
DC
operation
100ms
IDc(*1)=14A
IDpack(*2)=9.6A
2
3
5
7
2
0.1
3
5
7
2
1.0
3
5
7
2
10
3
5
7
2
100
0.01
23
5 7
2
0.1
1.0
35 7
2
10
35 7
2
100
35 7
IT11729
IT11728
0
20
40
5
10
60
20
15
80
100
120
25
35
30
37
40
140
160
IT11731
IT11730
0
20
40
1.0
0.5
60
2.0
1.5
80
100
120
2.5
140
160
0
1
2
3
4
5
6
7
8
40
10
9
10
20
30
VDS=200V
ID=14A
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
-
W
A S O
VGS -- Qg
PD -- Ta
PD -- Tc
Tc=25
°C
Single pulse
0
25
50
75
100
125
150
100
80
60
20
40
120
175
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
IT10478
Ambient Temperature, Ta --
°C
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
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PDF描述 |
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| 2SJ221-E | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ230 | 2.5 A, 60 V, 0.27 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ204-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ204-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ205 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Fied Effect Transistor |
| 2SJ205-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ205-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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