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参数资料
| 型号： | 2SJ319L |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 5/8页 |
| 文件大小： | 70K |
| 代理商： | 2SJ319L |
2SJ319(L), 2SJ319(S)
3
20
15
10
5
0
Channel
Dissipation
Pch
(W)
50
100
150
200
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
–50
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
–30
–10
–3
–1
–0.3
–0.1
–0.05
–1
–3
–10
–30
–100 –300 –500
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
s
Ta = 25 °C
1 ms
DC
Operation
(Tc
=
25
°C)
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Pulse Test
Typical Output Characteristics
–10 V
–8 V
–6 V
–5 V
–4 V
V
= –3.5 V
GS
–5
–4
–3
–2
–1
0
–2–4–6
–8
–10
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
V
= –10 V
Pulse Test
DS
75 °C
Typical Transfer Characteristics
Tc = –25 °C
25 °C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ319S | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ324-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-E2 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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