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参数资料
| 型号： | 2SJ319L |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 70K |
| 代理商： | 2SJ319L |
2SJ319(L), 2SJ319(S)
4
–20
–16
–12
–8
–4
0
–4
–8
12
–16
–20
Gate to Source Voltage
V
(V)
GS
–1 A
–2 A
Pulse Test
D
I
= –5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
10
5
2
1
0.5
0.2
0.1
–0.2
–0.5
–1
–2
–5
–10
V
= –10 V
Pulse Test
GS
5
4
3
2
1
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
–2 A
–1 A
I
= –5 A
D
Static Drain to Source on State Resistance
vs. Temperature
V
= –10 V
Pulse Test
GS
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
3
2
1
0.5
0.2
0.1
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25 °C
25 °C
75 °C
V
= –10 V
Pulse Test
DS
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ319S | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ324-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-E2 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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