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参数资料
| 型号： | 2SJ319L |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 7/8页 |
| 文件大小： | 70K |
| 代理商： | 2SJ319L |
2SJ319(L), 2SJ319(S)
5
10
500
200
100
50
20
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
–0.05 –0.1
–0.2
–0.5
–1
–2
–5
di/dt = 50 A/s, V
= 0
duty < 1 %, Ta = 25 °C
GS
0
–10
–20
–30
-40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
1000
200
500
100
50
20
10
5
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
0
–100
–200
–300
–400
0
4
8
12
16
20
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
0
–4
–8
–12
–16
–20
–500
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
GS
V
DS
V
= –50 V
–100 V
–150 V
DD
V DD = –150 V
–100 V
–50 V
500
200
100
50
20
10
5
–10
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
t f
r
t
d(off)
t
d(on)
t
V
= –10 V, V
= –30 V
duty < 1 %, PW = 2 s
GS
DD
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ319S | 3 A, 200 V, 2.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ324-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-AZ | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ324-Z-E2 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ319L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(3+Tab) DPAK(L)-(1) |
| 2SJ319S | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ319S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET P-CH 200V 3A 3-Pin(2+Tab) DPAK(S) |
| 2SJ319STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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