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参数资料
| 型号： | 2SJ338-Y(2-7B1B) |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 116K |
| 代理商： | 2SJ338-Y(2-7B1B) |
2SJ338
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
—
±100
nA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0
180
—
V
Gatesource cutoff voltage
(Note 3)
V GS (OFF)
VDS = 10 V, ID = 10 mA
0.8
—
2.8
V
Drainsource saturation voltage
VDS (ON)
ID = 0.6 A, VGS = 10 V
—
1.2
3.0
V
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.3 A
—
0.7
—
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
210
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
90
—
Reverse transfer capacitance
Qrss
VDS = 10 V, VGS = 0 , f = 1 MHz
—
45
—
pF
Note 3: VGS (OFF) Classification
O: 0.8~1.6, Y: 1.4~2.8
This transistor is an electrostatic-sensitive device. Handle with care.
Marking
J338
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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