- 您现在的位置：买卖IC网 > PDF目录41531 > 2SJ356-AZ 2 A, 60 V, 0.95 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ356-AZ |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.95 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 68K |
| 代理商： | 2SJ356-AZ |
2SJ356
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –60 V, VGS = 0
–10
A
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.4
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –1.0 A
1.0
S
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –1.0 A
0.65
0.95
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –1.0 A
0.41
0.50
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
270
pF
Output Capacitance
Coss
f = 1.0 MHz
145
pF
Reverse Transfer Capacitance
Crss
55
pF
Turn-On Delay Time
td(on)
VDD = –25 V, ID = –1.0 A
4.3
ns
Rise Time
tr
VGS(on) = –10 V
21
ns
Turn-Off Delay Time
td(off)
RG = 10
, RL = 25
115
ns
Fall Time
tf
75
ns
Gate Input Charge
QG
VDS = –48 V,
11.6
nC
Gate to Source Charge
QGS
VGS = –10 V,
1.0
nC
Gate to Drain Charge
QGD
ID = –2.0 A, IG = –2 mA
3.8
nC
Internal Diode Reverse Recovery Time
trr
IF = 2.0 A,
82
ns
Internal Diode Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
94
nC
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Derating
Factor
-%
25
100
80
60
40
20
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
–0.5
–10
VDS - Drain to Source Voltage - V
0
50
75
100
125
150
–5
–2
–1
–0.5
–0.2
–0.1
–0.05
Single pulse
–1
–100
–2
–5
–10
–20
–50
PW
=
100
ms
10
ms
1 ms
DC
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ388L | 10 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ388L | 10 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ408(S) | 50 A, 60 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK2174(L) | 0.27 ohm, POWER, FET |
| 2SK2330(S) | 0.4 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ356-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R Tape & Reel |
| 2SJ357 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
发布紧急采购，3分钟左右您将得到回复。