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参数资料
| 型号： | 2SJ356-AZ |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.95 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/6页 |
| 文件大小： | 68K |
| 代理商： | 2SJ356-AZ |
2SJ356
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(j-a)
-
Transient
Thermal
Resistance
-
C/
W
1 m
1 000
100
10
1
PW - Pulse Width - s
10 m
100 m
1
10
100
Single pulse
Using ceramic substrate of
7.5 cm2
× 0.7 mm
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD
-
Diode
Forward
Current
-A
–0.2
–10
–1
–0.1
–0.01
–0.001
–0.0001
VSD - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
–1
10 000
1 000
100
10
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
0
1 000
100
10
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
trr
-
Reverse
Recovery
Time
-
ns
–0.05
1 000
100
10
IF - Diode Forward Current -A
Ciss
–1.2
–0.4
–0.6
–0.8
–1.0
VGS = 0
Pulsed
–10
–100
VGS = 0
f = 1 MHz
Coss
Crss
–1
–10
VDD = –25 V
VGS(on) = –10 V
td(off)
tf
td(on)
tr
–10
–0.1
–0.5
–1
–5
VGS = 0
di/dt = 50 A/ s
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PDF描述 |
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| 2SJ408(S) | 50 A, 60 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ356-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R Tape & Reel |
| 2SJ357 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
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