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参数资料
| 型号： | 2SJ356-AZ |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 60 V, 0.95 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/6页 |
| 文件大小： | 68K |
| 代理商： | 2SJ356-AZ |
2SJ356
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.001
1
0.8
0.6
0.4
0.2
0
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
1
0.8
0.6
0.4
0.2
VGS - Gate to Source Voltage - V
–10
–0.01
–0.1
–1
VGS = –10 V
Pulsed
TA = 150 C
TA = 75 C
TA = 25 C
TA = 0 C
TA = –25 C
–20
–2
–4
–6
–8 –10 –12 –14 –16 –18
ID = 2.0 A
ID = 1.0 A
Pulsed
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID
-
Drain
Current
-
A
0
–5
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
–1
–10
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
–0.0001
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.001
1.5
ID - Drain Current - A
Pulsed
–1
–2
–3
–4
–5
–4
–3
–2
–1
–10
V
–4.5
V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
–2
–3
–4
–1
–0.1
–0.01
–0.001
–0.0001
–0.00001
VDS = –10 V
Pulsed
TA = 150 C
TA = –25 C
TA = 25 C
TA = 75 C
1
0.1
0.01
0.001
–0.001
–0.01
–0.1
–1
TA = –25 C
TA = 0 C
TA = 25 C
TA = 75 C
TA = 150C
VGS = –4 V
Pulsed
1
0.5
0
–0.01
–0.1
–1
–10
TA = 150 C
TA = 75 C
TA = 25 C
TA = 0 C
TA = –25 C
VDS = –10 V
Pulsed
TA = 0 C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ356-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R Tape & Reel |
| 2SJ357 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
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