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参数资料
| 型号： | 2SJ357-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 64K |
| 代理商： | 2SJ357-AZ |
2SC2778
2
SJC00123BED
IC VBE
VCE(sat) IC
hFE IC
PC Ta
IC VCE
IB VBE
fT IE
Zrb IE
Cre VCE
0
160
40
120
80
0
240
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
018
612
0
12
10
8
6
4
2
Ta
= 25°C
IB
= 100 A
80
A
60
A
40
A
20
A
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
0
120
40
80
160
0
12
10
8
6
4
2
VCE
= 10 V
Ta
= 25°C
Base current I
B (A)
Collector
current
I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
300
250
200
150
100
50
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
0.1
1
10
100
0
600
500
400
300
200
100
Ta
= 25°C
VCB
= 10 V
6 V
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
0.1
1
10
0
80
60
20
40
f
= 2 MHz
Ta
= 25°C
VCB
= 6 V
10 V
Reverse
transfer
impedance
Z
rb
(
)
Emitter current I
E (mA)
0.1
1
10
100
0
2.4
2.0
1.6
1.2
0.8
0.4
IC
= 1 mA
f
= 10.7 MHz
Ta
= 25°C
Collector-emitter voltage V
CE (V)
Reverse
transfer
capacitance
C
re
(pF)
(Common
emitter)
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357-T1 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2 | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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