参数资料
型号: 2SJ357
元件分类: 小信号晶体管
英文描述: 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: PACKAGE-3
文件页数: 1/10页
文件大小: 175K
代理商: 2SJ357
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SJ358-T2-AZ 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ358-T2 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ358-T2-AZ 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ358-T1-AZ 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ362(TP) 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ357-T1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape
2SJ358 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
2SJ358-T1-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R
2SJ360 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors
2SJ360(F) 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube