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参数资料
| 型号： | 2SJ357 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PACKAGE-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 175K |
| 代理商： | 2SJ357 |
2SJ357
2
Data Sheet D10803EJ3V0DS00
ELECTRICAL SPECIFICATIONS (TA = +25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Drain Shut-down Current
IDSS
VDS = –30 V, VGS = 0
–10
A
Gate Leak Current
IGSS
VGS = –16/+10 V, VDS = 0
–/+10
A
Gate Cutoff Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –1.0 A
1.8
S
Drain-Source On-Resistance
RDS(on)1
VGS = –4 V, ID = –1.5 A
0.23
0.35
Drain-Source On-Resistance
RDS(on)2
VGS = –10 V, ID = –1.5 A
0.12
0.20
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
645
pF
Output Capacitance
Coss
f = 1.0 MHz
500
pF
Feedback Capacitance
Crss
275
pF
On-Time Delay
td(on)
VDD = –25 V, ID = –1.5 A
8
ns
Rise Time
tr
VGS(on) = –10 V
42
ns
Off-Time Delay
td(off)
RG = 10
, RL = 17
145
ns
Fall Time
tf
170
ns
Gate Input Charge
QG
VDS = –24 V,
25.1
nC
Gate-Source Chanrge
QGS
VGS = –10 V,
2.0
nC
Gate-Drain Charge
QGD
ID = –3.1 A, IG = –2 mA
9.8
nC
Internal Diode Reverse
trr
IF = 3.0 A
112
ns
Recovery Time
di/dt = 50 A/
s
Internal Diode Reverse
Qrr
106
nC
Recovery Charge
CHARACTERISTICS CURVES (TA = +25
°C)
100
25
80
60
40
20
0
50
75
100
125
150
TA – Ambient Temperature – °C
dT
–
Derating
Factor
–
%
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
–10
–1
–5
–2
–1
–0.5
–2
–5
–10
–20
–100
VDS – Drain to Source Voltage – V
ID
–
Drain
Current
–
A
FORWARD BIAS SAFE OPERATING AREA
–50
–0.05
–0.1
–0.2
DS
Single Pulse
10
ms
PW
=
100
ms
1 ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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