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参数资料
| 型号： | 2SJ357 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | PACKAGE-3 |
| 文件页数： | 6/10页 |
| 文件大小： | 175K |
| 代理商： | 2SJ357 |
2SJ357
3
Data Sheet D10803EJ3V0DS00
–10
–1
–8
–6
–4
–2
0–2
–3
–4
–5
VDS – Drain to Source Voltage – V
ID
–
Drain
Current
–
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–10
–1
–0.1
–0.01
–2
–3
VGS – Gate to Source Voltage – V
ID
–
Drain
Current
–A
TRANSFER CHARACTERISTICS
–4
–0.00001
–0.0001
–0.001
Pulsed
–10
V
–4.5
V
–4.0
V
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
TA = –25 °C
TA = 150 °C
TA = 0 °C
TA = 25 °C
TA = 75 °C
10
–0.001
1
0.1
0.01
–0.01
–0.1
–1
ID – Drain Current – A
|y
fs
|–
Forward
Transfer
Admittence
–
S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
–0.001
0.3
–0.01
–0.1
ID – Drain Current – A
R
DS(on)
–
Drain
to
Source
On-State
Resistance
–
–10
0
0.1
VDS = –10 V
Pulsed
0.001
–0.0001
TA = 75 °C
TA = 25 °C
TA = 150 °C
TA = 0 °C
TA = –25 °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
–1
0.5
VDS = –10 V
Pulsed
VGS = –4 V
Pulsed
–0.01
0.3
0.1
–0.1
–1
–10
ID – Drain Current – A
R
DS(on)
–
Drain
to
Source
On-State
Resistance
–
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
VGS = –10 V
Pulsed
0
–0.001
TA = 25 °C
0.2
TA = 0 °C
TA = –25 °C
TA = 150 °C
TA = 75 °C
0.2
0.4
–2
VGS – Gate to Source Voltage – V
R
DS(on)
–
Drain
to
Source
On-State
Resistance
–
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
0.6
0.2
0.4
–4
–6
–8 –10 –12 –14 –16 –18 –20
ID = 1.5 A
ID = 3.0 A
TA = 25 °C
TA = –25 °C
TA = 0 °C
TA = 75 °C
TA = 150 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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