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参数资料
| 型号： | 2SJ357 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 64K |
| 代理商： | 2SJ357 |
1994
DATA SHEET
The 2SJ357 is a P-channel vertical MOS FET that can be
used as a switching element. The 2SJ357 can be directly
driven by an IC operating at 5 V.
The 2SJ357 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
Can be directly driven by an IC operating at 5 V.
Low on-resistance
RDS(ON) = 0.35
MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.20
MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
VGS = 0
–30
V
Gate-Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
–/+3.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms
–/+6.0
A
Duty Cycle
≤ 1 %
Total Power Loss
PT
Mounted on ceramic board of 7.5 cm
2 × 0.7 mm
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
Document No. D10803EJ3V0DS00 (3rd edition)
(Previous No. TC-2490)
Date Published January 1999 N CP(K)
Printed in Japan
The information in this document is subject to change without notice.
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
23
1
4.2
2.1
1.0
0.4 ±0.05
5.4
±0.25
3.65
±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA1
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ357-T1 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2 | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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