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参数资料
| 型号： | 2SJ357 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/4页 |
| 文件大小： | 64K |
| 代理商： | 2SJ357 |
2SC2778
3
SJC00123BED
Cob VCB
bie gie
bre gre
bfe gfe
boe goe
1
10
100
0
3.2
2.4
0.8
1.6
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
020
16
412
8
0
12
10
8
6
4
2
yie
= g
ie
+ jb
ie
VCE
= 10 V
f
= 0.45 MHz
1 mA
2 mA
4 mA
7 mA
58
25
10.7
100
IE
= 0.1 mA
Input conductance g
ie (mS)
Input
susceptance
b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
3.0
0
0.5
1.0
1.5
2.0
2.5
yre
= g
re
+ jb
re
VCE
= 10 V
f
= 0.45 MHz
IE
= 7 mA
2 mA
4 mA
1 mA
0.4 mA
25
58
100
10.7
Reverse transfer conductance g
re (mS)
Reverse
transfer
susceptance
b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
yfe
= g
fe
+ jb
fe
VCE
= 10 V
f
= 0.45MHz
10.7
0.45
0.4 mA
0.1
mA
1 mA
2 mA
4 mA
IE
= 7 mA
100
25
58
Forward transfer conductance g
fe (mS)
Forward
transfer
susceptance
b
fe
(mS
)
0
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
yoe
= g
oe
+ jb
oe
VCE
= 10 V
f
= 0.45 MHz
IE
= 0.1 mA
7 mA
4 mA
2 mA
1 mA
0.4 mA
58
10.7
25
100
Output conductance g
oe (mS)
Output
susceptance
b
oe
(mS
)
This product complies with the RoHS Directive (EU 2002/95/EC).
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ357-T1 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ357 | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2 | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ358-T2-AZ | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ357-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) MP-2 T/R Cut Tape |
| 2SJ358 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH |
| 2SJ358-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ360 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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