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参数资料
| 型号： | 2SJ377 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-64, 2-7B1B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 748K |
| 代理商： | 2SJ377 |
2SJ377
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
2
πMOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ378 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ383TP | 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ402(2-10S2B) | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ410-E | 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ411 | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ377(Q) | 制造商:Toshiba 功能描述:Pch -60V -5A PW-MOLD(5.5~6.8) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SJ377(TE16L1,NQ) | 功能描述:MOSFET P-Ch 60V 5A Rdson 0.19 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ377(TE16R) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16R1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
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