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参数资料
| 型号： | 2SJ377 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-64, 2-7B1B, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 748K |
| 代理商： | 2SJ377 |
Data Sheet D15063EJ1V0DS
4
2SK3481
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
Pulsed
12345
1
0.1
0.01
10
100
TA =
40C
25C
75C
150C
TA =
40C
25C
75C
150C
VDS = 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
234
1
0
20
60
40
80
56
VGS = 10 V
4.5 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
VDS = 10 V
TA = 150C
75C
25C
40C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
5
0
101520
Pulsed
80
60
40
20
0
15 A
ID = 30 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
1
0.1
80
60
40
20
0
10
100
Pulsed
VGS = 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
1
2
3
4
50
0
50
100
150
0
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ378 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ383TP | 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ402(2-10S2B) | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ410-E | 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ411 | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ377(Q) | 制造商:Toshiba 功能描述:Pch -60V -5A PW-MOLD(5.5~6.8) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SJ377(TE16L1,NQ) | 功能描述:MOSFET P-Ch 60V 5A Rdson 0.19 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ377(TE16R) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16R1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
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