参数资料
型号: 2SJ496TZ-E
元件分类: 小信号晶体管
英文描述: 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: SC-51, TO-92MOD, 3 PIN
文件页数: 5/10页
文件大小: 100K
代理商: 2SJ496TZ-E
2SJ496
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–5
A
Drain peak current
ID (pulse)
Note 1
–20
A
Body to drain diode reverse drain current
IDR
–5
A
Avalanche current
IAP
Note 3
–5
A
Avalanche energy
EAR
Note 3
2.14
mJ
Channel dissipation
Pch
Note 2
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100 s, duty cycle ≤ 10%
2. Value at Ta = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –5 V
RDS (on)
0.12
0.16
ID = –2.5 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
0.17
0.24
ID = –2.5 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
3
5
S
ID = –2.5 A, VDS = –10 V
Note 4
Input capacitance
Ciss
600
pF
Output capacitance
Coss
290
pF
Reverse transfer capacitance
Crss
80
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
10
ns
Rise time
tr
25
ns
Turn-off delay time
td (off)
95
ns
Fall time
tf
55
ns
VGS = –10 V
ID = –2.5 A
RL = 12
Body to drain diode forward voltage
VDF
–1.0
V
IF = –5 A, VGS = 0
Body to drain diode reverse recovery
time
trr
65
ns
IF = –5 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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