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参数资料
| 型号： | 2SJ496TZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-51, TO-92MOD, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 100K |
| 代理商： | 2SJ496TZ-E |
2SJ496
Rev.3.00 Sep 07, 2005 page 4 of 7
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –5 A
–1 A, –2 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
20
10
2
5
0.5
1
0.2
–0.1 –0.2
–0.5
–1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–10
500
200
50
100
20
5
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
200
500
100
50
20
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
300
100
10
30
3
1
–0.2
–0.5
–1
–2
–5
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–2 A
–1 A
–5 A
VGS = –10 V, VDD = –30 V
PW = 5
s, duty ≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ498 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FIELD-EFFECT TRANSISTOR |
| 2SJ499 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Load Switching Applications |
| 2SJ50 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER |
| 2SJ501 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ502 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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