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参数资料
| 型号： | 2SJ496TZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-51, TO-92MOD, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 100K |
| 代理商： | 2SJ496TZ-E |
2SJ496
Rev.3.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Ambient Temperature
Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–10
0
–2
–4
–6
–8
0–2
–4
–6
–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4–5
Tc = 75°C
1.6
0
0.4
0.8
1.2
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
–3 V
–2.5 V
–3.5 V
VGS = –2 V
Ta = 25°C
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–3
–10
–0.03
–1
–0.3
–0.1
–0.01
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
1 ms
10
s 100 s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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