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参数资料
| 型号： | 2SJ506(L) |
| 文件页数： | 6/12页 |
| 文件大小： | 61K |
| 代理商： | 2SJ506(L) |
2SJ505(L), 2SJ505(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain
current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
—
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state R
DS(on)
—
0.017
0.022
I
D = –25A, VGS = –10V*
1
resistance
R
DS(on)
—
0.024
0.036
I
D = –25A, VGS = –4V*
1
Forward transfer admittance
|y
fs|
2739—
S
I
D = 25A, VDS = 10V*
1
Input capacitance
Ciss
—
4100
—
pF
V
DS = –10V
Output capacitance
Coss
—
2100
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
450
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
32
—
ns
V
GS = –10V, ID = –10A
Rise time
t
r
—
225
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
530
—
ns
Fall time
t
f
—
330
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.1
—
V
I
F = –50A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
110
—
ns
I
F = –50A, VGS = 0
diF/ dt = 50A/s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ506L-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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