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参数资料
| 型号： | 2SJ506L |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 11/14页 |
| 文件大小： | 73K |
| 代理商： | 2SJ506L |
2SJ506(L), 2SJ506(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
–20
–16
–12
–8
–4
0
–4
–8
–12
–16
–20
–4 V
0
–1–2–3
–4
–5
–3 V
–20
–16
–12
–8
–4
–3.5 V
DS
V
= –10 V
Pulse Test
–10 V
Tc = –25
°C
Pulse Test
V
= –2.5 V
GS
75
°C
–5 V
–4.5 V
25
°C
–6 V
–8 V
–500
–200
–100
–20
–0.1
–10
–2
–10
–0.1 –0.2
–0.5 –1
–2
–5
–50
–5
–1
–0.2
–0.5
–20
–50
Ta = 25
°C
1 ms
PW
=
10
ms
(1shot)
10
s
100
s
DC
Operation
(Tc
=
25
°C)
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Operation in
this area is
limited by R DS(on)
Drain
Current
I
(A)
D
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Drain
Current
I
(A)
D
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ518AZTL-E | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ527(S) | 0.8 ohm, POWER, FET |
| 2SJ527(L) | 0.8 ohm, POWER, FET |
| 2SJ527(L) | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ506L-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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