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参数资料
| 型号： | 2SJ506L |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 13/14页 |
| 文件大小： | 73K |
| 代理商： | 2SJ506L |
2SJ506(L), 2SJ506(S)
6
100
50
20
10
–0.1 –0.2
–1
0
–10
–20
–30
–40
–50
200
100
50
1000
200
500
100
10
20
5
–0.1 –0.2
–1 –2
–5
–0.5
–5
20
10
–10
500
–20
–50
–2
=
1000
2000
5000
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
–20
0
–10
–20
–30
–40
0
–4
–8
–12
–16
–20
–50
816
24
32
40
DS
V
GS
V
= –25 V
–10 V
–5 V
DD
V
= –5 V
–10 V
–25 V
DD
I = –10 A
D
50
–0.5
–10
r
t
d(off)
t
t f
d(on)
t
V
= –10 V, V
= –10 V
PW = 10
s, duty < 1 %
GS
DD
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Switching
Time
t
(ns)
Switching Characteristics
Drain Current
I
(A)
D
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ506S | 10 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ518AZTL-E | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ527(S) | 0.8 ohm, POWER, FET |
| 2SJ527(L) | 0.8 ohm, POWER, FET |
| 2SJ527(L) | 0.8 ohm, POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ506L-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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