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参数资料
| 型号： | 2SJ527(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 60K |
| 代理商： | 2SJ527(L) |
2SJ527(L),2SJ527(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
–0.1 –0.3
–1
–3
–10
–30
–100
–20
–10
–2
–1
–0.2
–0.1
0
–2
–4
–6
–8
–10
–5
–4
–3
–2
–1
0
–1
–2
–3
–4
–5
1 ms
Ta = 25
°C
100
s
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
10
s
–10 V
V
= –2.5 V
GS
–4 V
–3 V
–3.5 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
V
= –10 V
Pulse Test
DS
–0.5
–5
–50
DC
Operation
(Tc=25
°C)
PW
=
10
ms
(1
shot)
–6 V
–8 V
–5
–4
–3
–2
–1
–5 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ528(L) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528L-E | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box |
| 2SJ527L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box 制造商:Renesas Electronics Corporation 功能描述:P-channel MOSFET, 60V,5A,3ohm,DPAK-L |
| 2SJ527S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ527S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SJ527STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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