- 您现在的位置：买卖IC网 > PDF目录30601 > 2SJ527(L) 0.8 ohm, POWER, FET PDF资料下载
参数资料
| 型号： | 2SJ527(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 8/12页 |
| 文件大小： | 60K |
| 代理商： | 2SJ527(L) |
2SJ527(L),2SJ527(S)
5
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
10
1
–0.1
–0.3
–1
–3
–10
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
3
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
I
= –5 A
D
–1 A
–2 A
0.1
0.3
–1 A
I
= –4 A
D
10
1
–0.1 –0.2
–0.5
–1
–2
–5
–10
2
5
0.1
0.2
0.5
25 °C
Tc = –25 °C
75 °C
V
= –10 V
Pulse Test
DS
–30
V
= –10 V
GS
–4 V
Pulse Test
–5 A
–2 A
V
= –4 V
GS
–1, –2 A
–10 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ528(L) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528L-E | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box |
| 2SJ527L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box 制造商:Renesas Electronics Corporation 功能描述:P-channel MOSFET, 60V,5A,3ohm,DPAK-L |
| 2SJ527S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ527S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SJ527STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
发布紧急采购，3分钟左右您将得到回复。