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参数资料
| 型号： | 2SJ527(L) |
| 元件分类： | JFETs |
| 英文描述： | 0.8 ohm, POWER, FET |
| 封装： | DPAK-3 |
| 文件页数： | 9/12页 |
| 文件大小： | 60K |
| 代理商： | 2SJ527(L) |
2SJ527(L),2SJ527(S)
6
10
100
20
50
–0.1 –0.2
–0.5
–1
–2
–5
–10
0
–10
–20
–30
–40
–50
200
100
20
10
50
1000
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
4
8
12
16
20
50
100
20
5
2
10
1
–0.1 –0.2
–0.5
–1
–2
–5
–10
VGS
VDS
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
500
2
1
5
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
V
= –50 V
–25 V
–10 V
DD
V
= –10 V
–25 V
–50 V
DD
I = –5 A
D
V
= –10 V, V
= 30 V
duty < 1 %
GS
DD
t f
r
t
d(on)
t
d(off)
t
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ528(L) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528(S) | 0.37 ohm, POWER, FET |
| 2SJ528L-E | 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529(L) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527-L(E) | 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box |
| 2SJ527L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box 制造商:Renesas Electronics Corporation 功能描述:P-channel MOSFET, 60V,5A,3ohm,DPAK-L |
| 2SJ527S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ527S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SJ527STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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