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参数资料
| 型号： | 2SJ527STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 94K |
| 代理商： | 2SJ527STL-E |
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–5
0
–1
–2
–3
–4
0–2
–4
–6
–8
–10
–5
0
–1
–2
–3
–4
0
–1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–6 V
–8 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–50
–20
–0.2
–0.5
–10
–2
–5
–1
–0.1
–0.3
–1
–3
–10
–30
–100
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25
°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–2 A
–1 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.3
–3
–10
–0.1
–1
–30
10
5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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