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参数资料
| 型号： | 2SJ527STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 94K |
| 代理商： | 2SJ527STL-E |
2SJ527(L), 2SJ527(S)
Rev.3.00 Sep 07, 2005 page 4 of 8
2.0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.4
0.8
1.2
1.6
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –4 A
ID = –5 A
–1 A, –2 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
10
5
1
2
0.2
0.5
0.1
–0.1
–0.2
–0.5
–1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–10
100
50
20
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
1000
500
100
200
50
5
2
10
20
1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
4
8
12
16
20
VDS
VGS
100
20
50
10
2
5
1
–0.2
–0.5
–1
–5
–2
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–2 A
–1 A
–5 A
VGS = –10 V, VDD = –30 V
duty
≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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