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参数资料
| 型号： | 2SJ527STL-E |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 6/8页 |
| 文件大小： | 94K |
| 代理商： | 2SJ527STL-E |
2SC1907
Rev.2.00 Aug 10, 2005 page 4 of 5
–60
–50
–40
–30
–20
–10
0
510
015
Input Conductance gib (mS)
Input
Suceptance
b
ib
(mS)
Input Admittance Characteristics
20
25
30
VCB = 10 V
Output end short
yib = gib+jbib
I
C = 5 mA
1,200 MHz
1,000
600
10
mA
15
mA
400
900
800
–6
–5
–4
–3
–2
–1
0
–1.0
–0.8
–1.2
–0.6
Reverse Transfer Conductance grb (mS)
Reverse
Transfer
Suceptance
b
rb
(mS)
Reverse Transfer Admittance
Characteristics
–0.4
–0.2
0
VCB = 10 V
Input end short
yrb = grb+jbrb
I C
=
15
mA
400 MHz
600
800
900
1,000
1,200
10
mA
5
mA
0
10
20
30
40
50
60
–20
–10
–30
0
Forward Transfer Conductance gfb (mS)
Forward
Transfer
Suceptance
b
fb
(mS)
Forward Transfer Admittance
Characteristics
10
20
30
VCB = 10 V
Output end short
yfb = gfb+jbfb
I
C
=
15
mA
400 MHz
600
800
900
1,000
1,200
10
mA
5 mA
0
10
5
15
1.5
3.0
Output Conductance gob (mS)
Output
Suceptance
b
ob
(mS)
Output Admittance Characteristics
4.5
6.0
7.5
VCB = 10 V
Input end short
yob = gob+jbob
I C
=
5
mA
400 MHz
600
800
900
1,000
1,200
10
mA
15
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ528-L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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