- 您现在的位置：买卖IC网 > PDF目录55794 > 2SJ538 1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ538 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 39K |
| 代理商： | 2SJ538 |
2SJ538
No. A0519-1/4
Features
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--15
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--45
A
Allowable Power Dissipation
PD
1.0
W
Tc=25
°C30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--100
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.5
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--8A
10
15
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--8A, VGS=--10V
24
30
m
RDS(on)2
ID=--4A, VGS=--4V
40
52
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
2000
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
1000
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
470
pF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0519
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
O0406PA MS IM TC-00000219
SANYO Semiconductors
DATA SHEET
2SJ538
P-Channel Silicon MOSFET
Load Switching Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ539 | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ540-E | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ550STL-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ567 | 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ576 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ538 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P I-PAK |
| 2SJ539 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ539-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ540 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ540-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
发布紧急采购，3分钟左右您将得到回复。