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参数资料
| 型号： | 2SJ550STL-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-83, LDPAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 95K |
| 代理商： | 2SJ550STL-E |
2SJ550(L), 2SJ550(S)
Rev.3.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2
–4
–6
–8
–10
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–6 V
–4 V
–3.5 V
–3 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
10
100
30
300
3
0.3
1
0.1
0.3
1
3
10
30
100
1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
0
–0.8
–1.6
–2.4
–3.2
0
–4
–8
–12
–16
–20
Pulse Test
ID = –15 A
–10 A
–5 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.3
0.03
0.1
0.01
–0.3
–10
–30
–0.1
–3
–1
–100
10
3
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ551 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ551L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ551-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box |
| 2SJ551L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray |
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