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参数资料
| 型号： | 2SJ550STL-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-83, LDPAK-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 95K |
| 代理商： | 2SJ550STL-E |
2SJ550(L), 2SJ550(S)
Rev.3.00 Sep 07, 2005 page 4 of 8
0.40
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.08
0.16
0.24
0.32
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –15 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1
–0.3
–1
–3
–30
–10
–100
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5 –1
–2
–5
–20
–10
500
100
200
20
50
5
10
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
3000
300
30
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
200
500
100
20
50
10
–0.2
–0.5 –1
–5
–2
–20
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –4 V
–10 A
–5 A
–5 A, –10 A, –15 A
VGS = –10 V, VDD = –30 V
PW = 5
s, duty ≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ551 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ551L | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ551-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box |
| 2SJ551L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray |
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