参数资料
型号: 2SJ551(S)
文件页数: 10/12页
文件大小: 62K
代理商: 2SJ551(S)
2SJ550(L),2SJ550(S)
7
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50W
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
20
16
12
8
4
25
50
75
100
125
150
0
I
= –15 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
W
–20
–16
–12
–8
–4
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
= 0, 5 V
GS
–10 V
–5 V
Pulse Test
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Source to Drain Voltage
V
(V)
SD
Repetitive
Avalanche
Energy
E
(mJ)
AR
相关PDF资料
PDF描述
2SJ552(L)
2SJ552(S)
2SJ553(L)
2SJ553(S)
2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
相关代理商/技术参数
参数描述
2SJ551STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ552 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ552(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262AA
2SJ552(S) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB