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参数资料
| 型号： | 2SJ555 |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 69K |
| 代理商： | 2SJ555 |
2SJ555
5
0
–4
–8
–12
–16
–20
–1
–3
–10
–30
–100
–300
–1000
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
25 °C
75 °C
V
= –10 V
DS
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(m
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
–2
–1.6
–1.2
–0.8
–0.4
50
40
30
20
10
–40
0
40
80
120
160
0
100
50
5
2
1
–10 A
20
10
V
= –4 V
GS
–10,–20A
I
= –50 A
D
GS
V
= –10 V
–50 A
–20 A
–10 V
GS
V
= –4 V
–10 A
I = –50 A
D
–20 A
–5 A
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ555(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P |
| 2SJ555-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,60A,17m ohm,TO-3P |
| 2SJ557 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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