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参数资料
| 型号： | 2SJ555 |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 69K |
| 代理商： | 2SJ555 |
2SJ555
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.017
0.022
I
D = –30A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.024
0.036
I
D = –30A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
2745—
S
I
D = –30A, VDS = –10V
Note4
Input capacitance
Ciss
—
4100
—
pF
V
DS = –10V
Output capacitance
Coss
—
2100
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
450
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
32
—
ns
V
GS = –10V, ID = –30A
Rise time
t
r
—
270
—
ns
R
L = 1
Turn-off delay time
t
d(off)
—
570
—
ns
Fall time
t
f
—
360
—
ns
Body–drain diode forward voltage
V
DF
—
–1.1
—
V
I
F = –60A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
115
—
ns
I
F = –60A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ555(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P |
| 2SJ555-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,60A,17m ohm,TO-3P |
| 2SJ557 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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