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参数资料
| 型号： | 2SJ555 |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 69K |
| 代理商： | 2SJ555 |
2SJ555
6
1000
500
200
50
100
20
10
–0.1 –0.3
–3
0
–10
–20
–30
–40
–50
2000
1000
500
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
80
160
240
320
400
1000
200
500
100
20
50
10
–0.1 –0.3
–1
–3
–10
–1
–30
200
100
DS
V
GS
V
= –50 V
–25 V
–10 V
DD
–100
V
= –10 V
–25 V
–50 V
DD
5000
–30
–100
r
t
d(off)
t
t f
d(on)
t
–10
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
V
= –10 V, V
= –30 V
PW = 10 s, duty < 1 %
GS
DD
=
I = –60 A
D
10000
20000
50000
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
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| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646 | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ646-TL | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ555(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P |
| 2SJ555-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 60A 3-Pin(3+Tab) TO-3P Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,60A,17m ohm,TO-3P |
| 2SJ557 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
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