- 您现在的位置：买卖IC网 > PDF目录48160 > 2SJ575 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ575 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 162K |
| 代理商： | 2SJ575 |
2SJ575
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
-30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
-100
mA
Drain peak current
I
D(pulse)
Note1
-400
mA
Body-drain diode reverse drain current
I
DR
-100
mA
Channel dissipation
Pch
Note 2
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-30
—
V
I
D = -100 A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±5
AV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——-1
AV
DS = -30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
-1.3
—
-2.3
V
I
D = -10A, VDS = -5 V
Static drain to source on state R
DS(on)
—
2.8
3.3
I
D = -50 mA,VGS = -10 V
Note 3
resistance
R
DS(on)
—
5.7
7.9
I
D = -50 mA,VGS = -4 V
Note 3
Forward transfer admittance
|y
fs|
68
105
—
mS
I
D = -50 mA, VDS = -10 V
Note 3
Input capacitance
Ciss
—
25
—
pF
V
DS = -10 V
Output capacitance
Coss
—
20
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
8
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
10—ns
I
D = -50mA, VGS = -10 V
Rise time
t
r
—
15—ns
R
L = 200
Turn-off delay time
t
d(off)
—
40—ns
Fall time
t
f
—
45—ns
Note:
3. Pulse test
4. Marking is AP
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ624-A | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ649 | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1065-4 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK1197 | POWER, FET |
| 2SK1402A-E | 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
发布紧急采购，3分钟左右您将得到回复。