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参数资料
| 型号： | 2SJ575 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MPAK-3 |
| 文件页数： | 5/7页 |
| 文件大小： | 162K |
| 代理商： | 2SJ575 |
2SJ575
3
Main Characteristics
-0.1
-1.0
-10
-50
-0.5
-0.4
-0.3
-0.2
-0.1
0
-2
-4
-6
-8
-10
-0.5
-0.4
-0.3
-0.2
-0.1
0
-2
-4
-6
-8
-10
800
600
400
200
0
50
100
150
200
V
= -3 V
GS
Tc = –25 °C
75 °C
Pulse Test
V
= -10 V
Pulse Test
DS
-5
-1.0
-0.1
-0.01
-0.001
PW
=
10
ms
(1
shot)
DC
Operation
-5V
-4 V
-7 V -6 V
25 °C
Drain to Source Voltage
V
(V)
DS
Mavimum Safe Operation Area
Drain
Current
I
(A)
D
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in this area
is limited by RDS(on)
Channel
Dissipation
*Pch
(mW)
Ambient Temperature
Ta ( °C)
Power vs. Temperature Derating
Drain
Current
I
(A)
D
Drain
Current
I
(A)
D
10 s
100 s
1 ms
-0.05
-0.2 -0.5
-2
-5
-20
-0.0005
-0.002
-0.005
-0.02
-0.05
-0.2
-0.5
-2
Ta=25 °C
*Value on the alumina ceramic boad (12.5x20x0.7mm)
Value on the alumina ceramic boad (12.5x20x0.7mm)
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PDF描述 |
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| 2SK1065-4 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK1197 | POWER, FET |
| 2SK1402A-E | 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ576 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Switching |
| 2SJ577 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ578 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ579 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ580 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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