参数资料
型号: 2SJ601
元件分类: 小信号晶体管
英文描述: 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封装: TO-251, MP-3, 3 PIN
文件页数: 3/8页
文件大小: 170K
代理商: 2SJ601
Data Sheet D14646EJ4V0DS
3
2SJ601
TYPICAL CHARACTERISTICS (TA = 25°C)
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(j-C) = 1.92C/W
Rth(j-A) = 125C/W
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
80
20
40
60
100
140
120
160
100
80
60
40
20
0
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
VDS - Drain to Source Voltage - V
–1
–10
–100
–0.1
–1
–10
TC = 25C
Single Pulse
–0.1
–100
Power
Dissipation
Limited
RDS(on)
Limited ID(DC)
ID(pulse)
PW
=
10
s
1 ms
10
ms
DC
–1000
100
s
相关PDF资料
PDF描述
2SJ601-Z-AZ 36000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3366-AZ 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3367-Z-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
2SK3367-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3367-Z-AZ 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB
相关代理商/技术参数
参数描述
2SJ601-AZ 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 Cut Tape 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO251 Bulk 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,36A,25m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 36A 3-Pin(3+Tab) TO-251
2SJ601-Z 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
2SJ601-Z-AZ 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -60V -36A 31m@10V TO252 Bulk
2SJ601-Z-E1 制造商:Renesas Electronics Corporation 功能描述:
2SJ601-Z-E1-AZ 制造商:Renesas Electronics Corporation 功能描述: