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参数资料
| 型号： | 2SJ624-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-96, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 71K |
| 代理商： | 2SJ624-A |
Data Sheet D15890EJ1V0DS
2
2SJ624
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS =
m8.0 V, VDS = 0 V
m10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1.0 mA
–0.45
–0.75
–1.5
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –2.5 A
5.0
9.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –4.5 V, ID = –2.5 A
43
54
m
RDS(on)2
VGS = –2.5 V, ID = –2.5 A
53
71
m
RDS(on)3
VGS = –1.8 V, ID = –1.5 A
65
108
m
Input Capacitance
Ciss
VDS = –10 V
813
pF
Output Capacitance
Coss
VGS = 0 V
165
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
69
pF
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –2.5 A
14
ns
Rise Time
tr
VGS = –4.0 V
42
ns
Turn-off Delay Time
td(off)
RG = 10
80
ns
Fall Time
tf
92
ns
Total Gate Charge
QG
VDD = –16 V
8.1
nC
Gate to Source Charge
QGS
VGS = –4.0 V
1.3
nC
Gate to Drain Charge
QGD
ID = –4.5 A
2.8
nC
Body Diode Forward Voltage
VF(S-D)
IF = 4.5 A, VGS = 0 V
0.90
V
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS ()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG =
2 mA
VGS
Wave Form
VDS
Wave Form
VGS ()
VDS ()
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ624-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 4.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
| 2SJ625 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ625-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ625-T1B-A/XM | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ626 | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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